Renesas Electronics Corp.’s first blue-violet semiconductor laser diode integrates a new inner-stripe structure incorporating an optical waveguide into the semiconductor device Tokyo, Japan: Featuring ...

LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4 bulk GaN ...

Asahi Kasei Corporation succeeded in designing a laser diode that emits deep-ultraviolet light. The laser diode emits the world’s shortest lasing wavelength, at 271.8 nanometers (nm), under pulsed ...

Taking gallium nitride power ICs to the next level, researchers at Imec report co-integration of Schottky barrier diodes and high-electron-mobility transistors (HEMTs) on a smart power platform. The ...

A group at the University of Montpellier's Institute of Electronics and Systems (IES) has demonstrated mid-IR semiconductor lasers grown expitaxially on an on-axis silicon substrate, said to be the ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

Highly functional and free-form displays are critical components to complete the technological prowess of wearable electronics, robotics, and human-machine interfaces. A KAIST team created stretchable ...

OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it developed gallium nitride (GaN) diodes that can not only operate at a high current that is four times greater than that ...

High-power direct-diode lasers have emerged as a competitive option for applications like cladding, welding and heat treating. Stuart Woods of Coherent explains why the basic construction and ...

PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...