Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...

On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...

NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with ...

VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...

SEOUL, South Korea, June 9, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it presented a new DRAM technology roadmap for the next 30 years and the ...

Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize the memory industry as we know it today. Neo estimates that its 3D X-DRAM ...

TL;DR: SK hynix unveiled a 30-year DRAM roadmap featuring 4F2 Vertical Gate and 3D DRAM technologies to enhance performance, integration, and power efficiency beyond 10nm scales. These innovations aim ...

Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize computer memory. Neo estimates 3D X-DRAM can achieve 128Gb density with 230 ...

Samsung Electronics has successfully stacked the next-gen 3D DRAM to 16 layers, twice as many as its competitor Micron. According to reports from TheElec and ZDNet Korea, citing industry sources, ...