The TSHF5211, an 890-nm infrared emitting diode from Vishay, delivers a typical radiant intensity of 235 mW/sr at a drive current of 100 mA. According to the manufacturer, this represents a 50% ...

The VSMY98545 features a 42 mil by 42 mil emitter chip, which supports a low thermal resistance of 10 K/W junction-to-pin, and enables high drive currents up to 1 A and pulses up to 5 A. The emitter’s ...

The development of near-infrared (NIR) light-emitting diodes and phosphors represents a pivotal advancement in photonic technologies, with far‐reaching applications in biomedical imaging, night vision ...

Vishay Intertechnology, Inc. is broadening its optoelectronics portfolio with the introduction of two new 940 nm high-speed infrared emitting diodes in compact 3.2 mm by 2.51 mm by 1.2 mm clear SMD ...

MALVERN, Pa., July 17, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (VSH) is broadening its optoelectronics portfolio with the introduction of a new 890 nm high speed infrared (IR) emitting ...

(Nanowerk News) National University of Singapore (NUS) researchers have developed transparent near-infrared light-emitting diodes (LEDs) that could be integrated into the displays of smart-watches, ...