Digital Storage And Memory Projections For 2026, Part 2

AI is driving demand and higher prices for DRAM and NAND into 2026.  Products using non-volatile memories to replace NOR and ...
Hosted on MSN

Samsung touts 96% lower-power NAND design — researchers investigate design based on ferroelectric transistors

Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%. The work — Ferroelectric ...
Semiconductor Engineering

Cryogenic Etch: A Key Enabler Of 3D NAND

Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
동아사이언스

Ferroelectric transistor design promises major power savings for future NAND flash

As the scale of artificial intelligence (AI) models grows rapidly, securing the performance of memory semiconductors has become a key issue. NAND flash, a type of memory semiconductor with much larger ...
EDN

How can 3D FeFETs substitute NAND flash for low-latency storage

The part 1 of this two-article series outlined the NAND flash technology and how it transitioned from 2D to 3D NAND flash. The article also explained the current challenges in the way of density ...
ExtremeTech

New manufacturing technology enables vertical 3D NAND transistors, higher capacity SSDs

Share on Facebook (opens in a new window) Share on X (opens in a new window) Share on Reddit (opens in a new window) Share on Hacker News (opens in a new window) Share on Flipboard (opens in a new ...
Nanowerk

Printed organic transistors achieve record performance and 3D circuit density

(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...